High Density Chip to Chip Interconnects for Packaging

A high density of interconnects connecting a Gamma Ray Imager with a VLSI processing chip was developed for the Space Radiation Laboratory at the California Institute of Technology, Pasadena. The nominal resistance of the interconnects are ca. 1-10 ohms; the imager and VLSI chips are at least 100 microns apart.

The SEM picture above shows one of the interconnects (lateral dimension of 40 microns).